Schottky Barrier Diodes TM For Mixers and Detectors

DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest fre

Silicon & GaAs Schottky Diodes

Schottky Barrier devices are currently available in single beamlead dual 'T' ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency broadband

封装/外壳：2-SMD，扁平引线 包装：卷带（TR） 描述：SI SCHOTTKY NON HERMETIC BEAM LE 分立半导体产品 二极管 - 射频

High-Voltage, Precision, Low-Power Op Amps

General Description The MAX9943/MAX9944 is a family of high-voltage amplifiers that offers precision, low drift, and low-power consumption. Features ● Wide 6V to 38V Supply Range ● Low 100μV (max) Input Offset Voltage ● Low 0.4μV/°C Offset Drift ● Unity Gain Stable with 1nF Load Capacitance

High-Voltage, Precision, Low-Power Op Amps

General Description The MAX9943/MAX9944 is a family of high-voltage amplifiers that offers precision, low drift, and low-power consumption. Features ● Wide 6V to 38V Supply Range ● Low 100μV (max) Input Offset Voltage ● Low 0.4μV/°C Offset Drift ● Unity Gain Stable with 1nF Load Capacitance

Dual N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These dual low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with

Strain- and Bridge-Based Measurements

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PE99D Series 3.3 V PECL Clock Oscillators

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