Schottky Barrier Diodes TM For Mixers and Detectors

DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest fre

Silicon & GaAs Schottky Diodes

Schottky Barrier devices are currently available in single beamlead dual 'T' ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency broadband

包装：托盘 描述：SI TVAR HERMETIC MICROSTRIP 分立半导体产品 二极管 - 射频

封装/外壳：2-SMD，扁平引线 包装：卷带（TR） 描述：SI SCHOTTKY NON HERMETIC BEAM LE 分立半导体产品 二极管 - 射频

2N and 2P-Channel Enhancement Mode Power MOSFET

文件：799.92 Kbytes Page：8 Pages

2N and 2P-Channel Enhancement Mode Power MOSFET

文件：799.92 Kbytes Page：8 Pages

4 Channel DC/DC Converters IC with High-Efficiency Step-Up and Step-Down

文件：514.409 Kbytes Page：21 Pages

4 Channel DC/DC Converters IC with High-Efficiency Step-Up and Step-Down

文件：514.409 Kbytes Page：21 Pages

4 Channel DC/DC Converters IC with High-Efficiency Step-Up and Step-Down

文件：514.409 Kbytes Page：21 Pages