PASSIVE DEVICES - Spiral Bias Elements

DESCRIPTION The GC9000 series of spiral bias element chips are photolithographically fabricated planar spiral conductorssupported on a high quality fused quartz substrate. These devices are designed to meet hybrid microwave circuit requirements for DC power injection through Ku (or J) band. The

Silicon Passive Devices

The GC9000 series spiral inductor chips are planar passivated coils supported on a high quality fused quartz substrate. These devices are designed to meet hybrid microwave circuit requirements through Ku (or J) band. The actual inductor, which is photo-etch defined on a quartz substrate, consists of

封装/外壳：模具 功能：偏置网络 包装：卷带（TR） 描述：QUARTZ INDUCTOR NON HERMETIC CHI RF/IF，射频/中频和 RFID RF 其它 IC 和模块

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source m