RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source m

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

NAND GATES/HEX INVERTERS

DESCRIPTION - The 8002, 9003, 9004, 9007, and 9012 are active LOW level output AND gates commonly know as NAND gates. The 9016 and 9017 are hex inverters with input and output characteristics identical to a NAND gate.

Molded SIP Reed Relays

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Toggle Switches

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Toggle Switches

文件：67.82 Kbytes Page：1 Pages

Toggle Switches

文件：67.82 Kbytes Page：1 Pages