POWER GENERATION Step Recovery Diodes

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Silicon & GaAs Varactor Diodes

封装/外壳：2-SMD，扁平引线 包装：散装 描述：SI SRD HERMETIC MICROSTRIP 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

SWITCHMODE??Power Rectifier

. . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes,

MEDIUM CURRENT OVERVOLTAGE TRANSIENT SUPPRESSORS

Overvoltage Transient Suppressors . . . designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices operate in the forward mode as standa

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

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