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型号	功能描述	生产厂家企业	LOGO
GC1601	Si Abrupt Junction Varactors 分立	MICROCHIP 微芯科技	MICROCHIP
GC1601	CONTROL DEVICES 45 Volt Abrupt Junction Tuning Varactors 文件：157.36 Kbytes Page：3 Pages	MICROSEMI 美高森美	MICROSEMI
GC1601-30	CONTROL DEVICES 45 Volt Abrupt Junction Tuning Varactors 文件：157.36 Kbytes Page：3 Pages	MICROSEMI 美高森美	MICROSEMI
MGF1601B	MICROWAVE POWER GaAs FET High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic	MITSUBISHI 三菱电机	MITSUBISHI
XN1601	Silicon PNP(NPN) epitaxial planer transistor Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.	PANASONIC 松下	PANASONIC
LMX1601	PLLatinum??Low Cost Dual Frequency Synthesizer 文件：196.67 Kbytes Page：14 Pages	NSC 国半	NSC
LMX1601SLB	PLLatinum??Low Cost Dual Frequency Synthesizer 文件：196.67 Kbytes Page：14 Pages	NSC 国半	NSC
LMX1601TM	PLLatinum??Low Cost Dual Frequency Synthesizer 文件：196.67 Kbytes Page：14 Pages	NSC 国半	NSC