| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GC11N60 | COOLMOS | GOFORD 谷峰半导体 |   | |
Power Factor Correction Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap | GOFORD 谷峰半导体 | | ||
Power Factor Correction (PFC) Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap | GOFORD 谷峰半导体 | | ||
Power Factor Correction (PFC) Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap | GOFORD 谷峰半导体 | | ||
Power Factor Correction (PFC) Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap | GOFORD 谷峰半导体 | | ||
Power Factor Correction (PFC) Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap | GOFORD 谷峰半导体 | | ||
Power Factor Correction Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap | GOFORD 谷峰半导体 | | ||
Power Factor Correction Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap | GOFORD 谷峰半导体 | | ||
Power Factor Correction (PFC) Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap | GOFORD 谷峰半导体 | | ||
600V N Channel SUPER JUNCTION MOSFET | GOFORD 谷峰半导体 | | ||
MOSFET | GOFORD 谷峰半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.85356 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.03276 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.94216 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL DEPLETION-MODE POWER MOSFET 文件：220.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：297.95 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
GOFORD(谷峰) |
20+ |
TO-220F-3 |
50 |
||||
DIODES/美台 |
2450+ |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
DIODES/美台 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
|||
GOFORD(谷峰) |
2447 |
TO-220F |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
ELECTROMED |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
23+ |
65480 |
||||||
GOFORD |
2007202208 |
TO-252 |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
GC11N60规格书下载地址
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