位置：首页 > IC中文资料第8709页 > GBC548
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GBC548 | The GBC548 is designed for drive and output-stages of audio amplifiers 文件：171.72 Kbytes Page：2 Pages | ETL 亚历电子 |   | |
GBC548 | NPN SILICON TRANSISTOR 文件：169.52 Kbytes Page：2 Pages | GTM 勤益投资控股 | | |
GBC548 | The GBC548 is designed for drive and output-stages of audio amplifiers | ETL 亚历电子 | | |
Amplifier Transistors(NPN Silicon) Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | ||
Amplifier Transistors
| MOTOROLA 摩托罗拉 | | ||
Amplifier Transistors(NPN Silicon) Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | ||
Amplifier Transistors(NPN Silicon) Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | ||
UHF push-pull power MOS transistor DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provid | PHILIPS 飞利浦 | |
GBC548产品属性
- 类型
描述
- 型号
GBC548
- 制造商
GTM
- 制造商全称
GTM
- 功能描述
NPN SILICON TRANSISTOR
GBC548规格书下载地址
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