NPN Silicon Transistors

NPN Silicon Transistors

NPN General Purpose Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) (1) Taped in ammo pack 4000 (Raster 2.54) (2) On request: in bulk 5000 (Ra

NPN General Purpose Transistor

NPN General Purpose Transistors P/b Lead(Pb)-Free

NPN GENERAL PURPOSE TRANSISTOR

VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (PNP) device:BC556,BC557,BC558 Series • Pb free product :99 Sn above can meet RoHS environment substance directive request

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

Elektronische Bauelemente

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage VCBO: BC546 80 V BC547 50 V BC548 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Amplifier Transistors

NPN Silicon Amplifier Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Amplifier Transistors

NPN SILICON AMPLIFIER TRANSISTOR

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage VCBO: BC546 80 V BC547 50 V BC548 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon Amplifier Transistor 625mW

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中等功率双极型晶体管

Bipolar Transistors

NPN General Purpose Amplifier

文件：50.79 Kbytes Page：1 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：带盒（TB） 描述：TRANS NPN 30V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose NPN Transistors

文件：148.07 Kbytes Page：2 Pages

NPN Silicon Amplifier Transistor 625mW

文件：228.16 Kbytes Page：5 Pages

NPN General Purpose Transistor

文件：1.10078 Mbytes Page：5 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 30V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Amplifier Transistor 625mW

文件：228.16 Kbytes Page：5 Pages

NPN Silicon Amplifier Transistor 625mW

文件：228.16 Kbytes Page：5 Pages

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

UHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provid