PNPEPITAXIALTRANSISTOR

Description TheGBC327isdesignedfordriveandoutput-stagesofaudioamplifiers. Features •HighDCCurrentGain:100~630@VCE=-1V,IC=-100mA •ComplementarytoGBC337

TheGBC327isdesignedfordriveandoutput-stagesofaudioamplifiers

文件：191.58 Kbytes Page：3 Pages

SocketterminalstripScrewconnection,withraisedbase

Thesocketterminalstrip327-FUwithraisedbaseandapitchof14,5mmis availablein1to12poledesign. Theraisedbaseextendsthecreepagedistancetothegroundwhichallows600V inaccordancewithULandCSAregulationswithoutanadditionalinsulatingbase. Onefixingholeislocat

JumperAccessories

Thejumper327-Jelectricallybridgesadjacentpolesofseries326and327 terminals. Itisavailablein14mmpitchwith2to12poles. Justlikethelead,itisconnectedtotheclampingunits. Thejumpershellisinsulated.

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ327isP-channelMOSFieldEffectTransistordesignedfor solenoid,motorandlampdriver. FEATURES •LowOn-stateResistance RDS(on)=0.13ΩTYP.(VGS=−10V,ID=−2.0A) RDS(on)=0.21ΩTYP.(VGS=−4V,ID=−1.6A) •LowCis

SocketterminalstripScrewconnection

文件：167.73 Kbytes Page：1 Pages

CrystalClockOscillators

文件：101.88 Kbytes Page：1 Pages