Mini size of Discrete semiconductor elements

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● -20V, -7.7A, RDS(ON) = 25mΩ @VGS = -4.5V. RDS(ON) = 35mΩ @VGS = -2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

Single P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Single P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

MULTISYNC ON-SCREEN DISPLAY FOR MONITOR

DESCRIPTION The STV9422/24 is an ON SCREEN DISPLAY for monitor. It is built as a slave peripheral connected to a host MCU via a serial I2C bus. It includes a display memory, controls all the display attributes and generates pixels from the data read in its on chip memory. The line PLL and a speci