General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• -8.0 A, -20 V. RDS(on) = 0.024 Ω @ VGS = -4.5

RDS(on) = 0.032 Ω @ VGS = -2.5 V.

• Low gate charge (23nC typical).

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON).

• High power and current handling capability.

Applications

• DC/DC converter

• Load switch

• Battery Protection