位置：首页 > IC中文资料 > GAN041-650WSB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 1. General description The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |   |
更新时间：2025-8-16 17:30:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
20+ |
TO-247-3 |
300 |
||||
GOLDENTEK DISPLAY AMERICA |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
PMI |
QQ咨询 |
DIP |
110 |
全新原装 研究所指定供货商 |
|||
CentralLAb |
5600 |
公司优势库存 热卖中!! |
|||||
PMI |
22+ |
DIP |
5000 |
进口原装!现货库存 |
|||
POSITRONIC |
新 |
25 |
全新原装 货期两周 |
||||
Nexperia(安世) |
2447 |
TO-247-3 |
115000 |
300个/圆盘一级代理专营品牌!原装正品,优势现货,长 |
|||
Nexperia(安世) |
24+ |
TO247 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ADI(亚德诺) |
24+ |
PDIP-18 |
10000 |
现货 |
|||
高登 |
25+ |
DIP |
2200 |
国产替换现货降本 |
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GAN041-650WSB规格书下载地址
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DdatasheetPDF页码索引
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