GAL16V8D-15价格

参考价格:¥16.8516

型号:GAL16V8D-15LJN 品牌:Lattice Semiconductor 备注:这里有GAL16V8D-15多少钱,2025年最近7天走势,今日出价,今日竞价,GAL16V8D-15批发/采购报价,GAL16V8D-15行情走势销售排行榜,GAL16V8D-15报价。
型号 功能描述 生产厂家&企业 LOGO 操作

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:293.59 Kbytes Page:8 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

封装/外壳:20-LCC(J 形引线) 包装:管件 描述:IC CPLD 8MC 15NS 20PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

封装/外壳:20-LCC(J 形引线) 包装:托盘 描述:IC CPLD 8MC 15NS 20PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:293.59 Kbytes Page:8 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

GAL16V8D-15产品属性

  • 类型

    描述

  • 型号

    GAL16V8D-15

  • 制造商

    LATTICE

  • 制造商全称

    Lattice Semiconductor

  • 功能描述

    High Performance E2CMOS PLD Generic Array Logic

更新时间:2025-8-3 17:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LATTICE
24+
20-PLCC9x9
13500
免费送样原盒原包现货一手渠道联系
Lattice(莱迪斯)
24+
20-LCC(J 形引线)
7142
原厂可订货,技术支持,直接渠道。可签保供合同
LATTICE
21+
PLCC20
9800
只做原装正品假一赔十!正规渠道订货!
LATTICE/莱迪斯
25+23+
PLCC20
13397
绝对原装正品全新进口深圳现货
24+
PLCC
73
LATTICE/莱迪斯
22+
PLCC
45600
原装正品现货
LATTICE
22+
PLCC-20
2000
进口原装!现货库存
LATTIC
17+
PLCC
6200
100%原装正品现货
Lattice
21+
PLCC
12588
原装正品,自己库存 假一罚十
LATTICE
23+
PLCC20
8000
原装正品,假一罚十

GAL16V8D-15芯片相关品牌

  • ALPS
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  • YEONHO

GAL16V8D-15数据表相关新闻