位置：首页 > IC中文资料第5749页 > G996
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G996 | 1.6X Linear Fan Driver 文件：153.45 Kbytes Page：1 Pages | GMT 致新科技 |   | |
G996 | Fan Driver | GMT 致新科技 | | |
NGS Disease Research Panels 文件：234.01 Kbytes Page：2 Pages | HP 安捷伦 | | ||
NGS Disease Research Panels 文件：234.01 Kbytes Page：2 Pages | HP 安捷伦 | | ||
1.5A Low Dropout Regulator with Enable 文件：42.09 Kbytes Page：1 Pages | GMT 致新科技 | | ||
1.5A Low Dropout Regulator with Enable | GMT 致新科技 | | ||
1.5A Low Dropout Regulator with Enable 文件：42.09 Kbytes Page：1 Pages | GMT 致新科技 | | ||
1.5A Low Dropout Regulator with Enable 文件：42.09 Kbytes Page：1 Pages | GMT 致新科技 | | ||
1.5A Low Dropout Regulator with Enable 文件：42.09 Kbytes Page：1 Pages | GMT 致新科技 | | ||
1.5A Low Dropout Regulator with Enable 文件：42.09 Kbytes Page：1 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：38.77 Kbytes Page：1 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：38.77 Kbytes Page：1 Pages | GMT 致新科技 | | ||
Using the Fairchild FST Bus Switch as a 5V to 3V Translator Introduction Fairchild FST Bus Switches can be used for bi-directional translators. They can interface 5V components to 3V components with negligible propagation delay (tPD ≤ 250ps) and minimal power dissipation (ICC ≤ 10µA). As the number of systems that interface between 5V and 3.3V levels inc | Fairchild 仙童半导体 | | ||
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a | Philips 飞利浦 | | ||
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features ● Integrated gate protection diodes ● Low noise figure ● Low feedback capacitance ● High cross modulation performance ● Low input capacitance ● High AGC-range Applications Input and mixer stages in UHF tuner. | Temic | | ||
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure | SIEMENS 西门子 | |
G996产品属性
- 类型
描述
- 型号
G996
- 制造商
GMT
- 制造商全称
Global Mixed-mode Technology Inc
- 功能描述
1.5A Low Dropout Regulator with Enable
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GMT/致新 |
24+ |
NA/ |
5750 |
原装现货,当天可交货,原型号开票 |
|||
GLOBAL |
25+ |
TO263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
GMT/致新 |
24+ |
QFN |
880000 |
明嘉莱只做原装正品现货 |
|||
GMT/致新 |
24+ |
TO-263(5L) |
8000 |
原装现货 |
|||
GMT |
22+ |
QFN |
20000 |
公司只做原装 品质保障 |
|||
GMT/致新 |
21+ |
SOP8 |
2500 |
||||
GMT/致新 |
QFN |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
GMT |
22+ |
SOP8 |
12245 |
现货,原厂原装假一罚十! |
|||
GTM |
23+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
|||
GMT |
25+23+ |
SOP8 |
21246 |
绝对原装正品全新进口深圳现货 |
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DdatasheetPDF页码索引
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