| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G996 | 1.6X Linear Fan Driver 文件：153.45 Kbytes Page：1 Pages | GMT 致新科技 |   | |
G996 | Fan Driver | GMT 致新科技 | | |
NGS Disease Research Panels 文件：234.01 Kbytes Page：2 Pages | HP 安捷伦 | | ||
NGS Disease Research Panels 文件：234.01 Kbytes Page：2 Pages | HP 安捷伦 | | ||
1.5A Low Dropout Regulator with Enable | GMT 致新科技 | | ||
1.5A Low Dropout Regulator with Enable 文件：42.09 Kbytes Page：1 Pages | GMT 致新科技 | | ||
1.5A Low Dropout Regulator with Enable 文件：42.09 Kbytes Page：1 Pages | GMT 致新科技 | | ||
1.5A Low Dropout Regulator with Enable 文件：42.09 Kbytes Page：1 Pages | GMT 致新科技 | | ||
1.5A Low Dropout Regulator with Enable 文件：42.09 Kbytes Page：1 Pages | GMT 致新科技 | | ||
1.5A Low Dropout Regulator with Enable 文件：42.09 Kbytes Page：1 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：445.59 Kbytes Page：9 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：38.77 Kbytes Page：1 Pages | GMT 致新科技 | | ||
3A Low Dropout Regulator with Enable 文件：38.77 Kbytes Page：1 Pages | GMT 致新科技 | | ||
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure | SIEMENS 西门子 | | ||
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Speed, Micropower, Low-Voltage, SOT23, Rail-to-Rail I/O Comparators General Description The MAX987/MAX988/MAX991/MAX992/MAX995/MAX996 single/dual/quad micropower comparators feature low-voltage operation and rail-to-rail inputs and outputs. Their operating voltage ranges from +2.5V to +5.5V, making them ideal for both 3V and 5V systems. These comparators also ope | MAXIM 美信 | |
G996产品属性
- 类型
描述
- VCC (V)max.：
5.5
- IOUT(A)：
0.5
- Enableactive：
High
- ControlInterface：
VSET
- ControlMethod：
Linear
- VOUT：
1.6 X VSET
- Note：
EN
- Package：
SOP-8/TDFN3X3-8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GMT |
24+ |
SOP8 |
65200 |
一级代理/放心采购 |
|||
GMT |
25+23+ |
SOP8 |
21246 |
绝对原装正品全新进口深圳现货 |
|||
GMT/致新 |
25+ |
QFN |
880000 |
明嘉莱只做原装正品现货 |
|||
GTM |
23+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
|||
GMT/致新 |
QFN |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
GMT |
24+ |
SOP8 |
24 |
||||
GMT |
22+ |
QFN |
20000 |
公司只做原装 品质保障 |
|||
GMT |
13+ |
QFN |
542 |
全新 发货1-2天 |
|||
GMT/致新 |
24+ |
SOP-8 |
39197 |
郑重承诺只做原装进口现货 |
|||
GMT |
24+ |
QFN |
5000 |
全新原装正品,现货销售 |
G996规格书下载地址
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DdatasheetPDF页码索引
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