InGaAs PIN photodiode

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Low noise, low dark current Large active area Various active area sizes available Applications

Large active areas from φ1 to φ5 mm

InGaAs PIN photodiode

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Low noise, low dark current Large active area Various active area sizes available Applications

InGaAs PIN photodiode

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Low noise, low dark current Large active area Various active area sizes available Applications

InGaAs PIN photodiode

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Low noise, low dark current Large active area Various active area sizes available Applications

InGaAs PIN photodiode

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Low noise, low dark current Large active area Various active area sizes available Applications

InGaAs PIN photodiode

InGaAs PIN photodiode Ceramic package with large active area (φ10 mm) Features ● Large active area: φ10 mm ● High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) ● Low dark current ● Low PDL: 5 mdB Typ., 10 mdB Max. ● Photo response non-uniformity: ±2 Typ. Applications ● LD power monitor ● LD ag

InGaAs PIN photodiode

Low PDL (Polarization Dependence Loss) InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features

InGaAs PIN photodiode

Low PDL (Polarization Dependence Loss) InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features

InGaAs PIN photodiode

Low PDL (Polarization Dependence Loss) InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features

InGaAs PIN photodiode

Low PDL (Polarization Dependence Loss) InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features

InGaAs PIN photodiode

InGaAs 光电二极管

LF to 750 MHz, Digitally Controlled VGA

GENERAL DESCRIPTION The AD8370 is a low cost, digitally controlled, variable gain amplifier (VGA) that provides precision gain control, high IP3, and low noise figure. The excellent distortion performance and wide bandwidth make the AD8370 a suitable gain control device for modern receiver desi

Wire-Thread-Inserts

文件：102.37 Kbytes Page：3 Pages

LF to 750 MHz Digitally Controlled VGA

文件：1.043349 Mbytes Page：28 Pages

LF to 750 MHz, Digitally Controlled VGA

文件：826.11 Kbytes Page：28 Pages

LF to 750 MHz, Digitally Controlled VGA

文件：774.15 Kbytes Page：28 Pages