InGaAs PIN photodiode

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Low noise, low dark current Large active area Various active area sizes available Applications

Large active areas from φ1 to φ5 mm

InGaAs PIN photodiode

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Low noise, low dark current Large active area Various active area sizes available Applications

InGaAs PIN photodiode

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Low noise, low dark current Large active area Various active area sizes available Applications

InGaAs PIN photodiode

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Low noise, low dark current Large active area Various active area sizes available Applications

InGaAs PIN photodiode

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Low noise, low dark current Large active area Various active area sizes available Applications

InGaAs PIN photodiode

InGaAs PIN photodiode Ceramic package with large active area (φ10 mm) Features ● Large active area: φ10 mm ● High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) ● Low dark current ● Low PDL: 5 mdB Typ., 10 mdB Max. ● Photo response non-uniformity: ±2 Typ. Applications ● LD power monitor ● LD ag

InGaAs PIN photodiode

Low PDL (Polarization Dependence Loss) InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features

InGaAs PIN photodiode

Low PDL (Polarization Dependence Loss) InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features

InGaAs PIN photodiode

Low PDL (Polarization Dependence Loss) InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features

InGaAs PIN photodiode

Low PDL (Polarization Dependence Loss) InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features

InGaAs 光电二极管

InGaAs 光电二极管

single chip transceivers for T1/E1 and Integrated Service Digital Network (ISDN) primary rate interfaces

Fully Integrated T1/E1 Framer and Line Interface The Bt8370/8375/8376 is a family of single chip transceivers for T1/E1 and Integrated Service Digital Network (ISDN) primary rate interfaces, operating at 1.544 Mbps or 2.048 Mbps. These devices combine a sophisticated framer, transmit and receive

LF to 750 MHz Digitally Controlled VGA

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LF to 750 MHz Digitally Controlled VGA

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LF to 750 MHz Digitally Controlled VGA

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Synchronization processor for television receivers

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