G-MOUSE

GM8030-V25 是一款外置低功耗超高灵敏度便携式多系统GNSS卫星接收模组, 该产品采用 ublox 第八代芯片设计，支持GPS/ BDS/Glonass/ Galileo/ SBAS（WAAS、EGNOS、MSAS、GAGAN）。集成定位芯片，陶瓷天线体，LNA。支持多种SBAS 信号接收处理，具备全方位功能，向用户提供快速、准确的高性能定位体验。人工焊线与外接设备相连接。可广泛使用在车载监控，个人定位，行业设备之上，安装方便，可靠性强。

连接器外壳

UL94V-0 PBT impeller & frame

文件：371.3 Kbytes Page：1 Pages

UL94V-0 PBT impeller & frame

文件：371.3 Kbytes Page：1 Pages

包装：盒 描述：FAN AXIAL 80X32MM TACH CC 12VDC 风扇，热管理 无刷直流风扇（BLDC）

包装：盒 描述：FAN AXIAL 80X32MM TACH 24VDC 风扇，热管理 无刷直流风扇（BLDC）

UL94V-0 PBT impeller & frame

文件：371.3 Kbytes Page：1 Pages

UL94V-0 PBT impeller & frame

文件：371.3 Kbytes Page：1 Pages

UL94V-0 PBT impeller & frame

文件：371.3 Kbytes Page：1 Pages

UL94V-0 PBT impeller & frame

文件：371.3 Kbytes Page：1 Pages

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors