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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) trench IGBT technology • Low switching losses • Square RBSOA • 100 of the parts tested for ILM ① • Positive VCE (ON) temperature co-efficient • Ultra fast soft recovery co-pak diode • Tight parameter distribution • Lead-Free Benefits • High efficiency in a wide ra | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) trench IGBT technology • Low switching losses • Square RBSOA • 100 of the parts tested for ILM ① • Positive VCE (ON) temperature co-efficient • Ultra fast soft recovery co-pak diode • Tight parameter distribution • Lead-Free Benefits • High efficiency in a wide ra | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100 of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：466.59 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：379.97 Kbytes Page：10 Pages | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
TO-247-3 |
8000 |
只做原装，欢迎询价，量大价优 |
|||
Infineon/英飞凌 |
24+ |
TO-247-3 |
25000 |
原装正品,假一赔十! |
|||
INFINEON |
24+ |
T0-247 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
Infineon Technologies |
22+ |
TO247AC |
9000 |
原厂渠道,现货配单 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON/IR |
2023+ |
T0-247 |
8635 |
一级代理优势现货,全新正品直营店 |
|||
IR |
21+ |
TO-247 |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
25+ |
30000 |
原装现货,支持实单 |
||||
IR |
26+ |
TO-3P |
12000 |
原装，正品 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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G7PH35UD-E规格书下载地址
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DdatasheetPDF页码索引
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