型号 功能描述 生产厂家 企业 LOGO 操作
G6N02L

N-Channel Enhancement Mode Power MOSFET

Description The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

G6N02L

20V N Channel TRENCH MOSFET

GOFORD

谷峰半导体

DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS

Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed switching application

Motorola

摩托罗拉

Dual N-channel TrenchMOS logic level FET

1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits

NEXPERIA

安世

Power MOSFET

文件:232.66 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Dual N-channel TrenchMOS logic level FET

ETC

知名厂家

更新时间:2025-10-19 9:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
OMRON
22+
DIP
5000
进口原装!现货库存
OMRON
20+
DIP通信继电器
2890
只做原装现货继电器
SUPERTEX
24+
DIP-8
37500
原装正品现货,价格有优势!
OMRON
25+
DIP
4500
全新原装、诚信经营、公司现货销售
GOFORD
24+
SOT23-2L
8000
原厂原装,价格优势,欢迎洽谈!
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
2023+
5800
进口原装,现货热卖
OMRON
20+
DIP
15800
原装优势主营型号-可开原型号增税票
2023+
3000
进口原装现货
GOFORD
24+
con
2500
优势库存,原装正品

G6N02L数据表相关新闻