N-Channel Enhancement Mode Power MOSFET

Description The G60N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

DUAL N-Channel Enhancement Mode Power MOSFET

Description The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

DUAL N-Channel Enhancement Mode Power MOSFET

Description The G60N04D52A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AECQ Qualified Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The G60N04KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

40V N Channel TRENCH MOSFET

40V N+N Channel TRENCH MOSFET

Trench Mosfet

40V, 60A N-CH FAST SWITCHING MOSFETS

DESCRIPTION The AM60N04 is available in PDFN8(3.3x3.3) Package. FEATURE  RDS(ON), typ.=6.8 mΩ@VGS=10V  RDS(ON), typ.=10 mΩ@VGS=4.5V  Fast Switching Mosfet

N-Channel 4 0-V (D-S) MOSFET

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N-Channel MOSFET uses advanced trench technology

文件：2.73841 Mbytes Page：5 Pages

N-Channel Power MOSFET

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N-Channel 100V(D-S) MOSFET

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