| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
G60H65DFB | Trench gate field-stop 650 V, 60 A high speed HB series IGBT Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. | STMICROELECTRONICS 意法半导体 |   | |
Trench gate field-stop 650 V, 60 A high speed HB series IGBT Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. | STMICROELECTRONICS 意法半导体 | | ||
60 A, 650 V field stop trench gate IGBT with very fast diode 文件：1.92588 Mbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low thermal resistance 文件：1.57984 Mbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | | ||
60 A, 650 V field stop trench gate IGBT with Ultrafast diode 文件：2.06606 Mbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GOFORD |
24+ |
NA/ |
53250 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA/东芝 |
23+ |
TO-3PL |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
G |
24+ |
TO |
500 |
||||
新 |
341 |
全新原装 货期两周 |
|||||
原厂 |
23+ |
TO-3PL |
5000 |
原装正品,假一罚十 |
|||
ITT |
23+ |
65480 |
|||||
GOFORD(谷峰) |
2447 |
TO-252-2(DPAK) |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
GOFORD |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
GOFORD |
20+ |
TO-220 |
300000 |
现货很近!原厂很远!只做原装 |
|||
GOFORD |
10 |
G60H65DFB芯片相关品牌
G60H65DFB规格书下载地址
G60H65DFB参数引脚图相关
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G60H65DFB数据表相关新闻
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2019-9-13
DdatasheetPDF页码索引
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