型号 功能描述 生产厂家 企业 LOGO 操作
G60H65DFB

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

STMICROELECTRONICS

意法半导体

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

STMICROELECTRONICS

意法半导体

60 A, 650 V field stop trench gate IGBT with very fast diode

文件:1.92588 Mbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件:1.57984 Mbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

60 A, 650 V field stop trench gate IGBT with Ultrafast diode

文件:2.06606 Mbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

更新时间:2025-11-3 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GOFORD
24+
NA/
53250
原装现货,当天可交货,原型号开票
G
24+
TO
500
ITT
23+
65480
GOFORD谷峰
24+
TO-252
7500
原装现货
341
全新原装 货期两周
FSC
2025+
TO-3P
4325
全新原厂原装产品、公司现货销售
原厂
23+
TO-3PL
5000
原装正品,假一罚十
TOSHIBA/东芝
23+
TO-3PL
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
GOFORD(谷峰)
2447
TO-252-2(DPAK)
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
GOFORD
20+
TO-220
300000
现货很近!原厂很远!只做原装

G60H65DFB数据表相关新闻