60 A, 650 V field stop trench gate IGBT with very fast diode

文件：1.92588 Mbytes Page：13 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 650V 120A 360W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Features • Maximum junction temperature: TJ = 175 °C • Excellent switching performance thanks to the extra driving kelvin pin • Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Minimized tail current • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recov

Low thermal resistance

文件：1.57984 Mbytes Page：19 Pages

封装/外壳：TO-247-4 包装：卷带（TR） 描述：IGBT 分立半导体产品 晶体管 - UGBT、MOSFET - 单

60 A, 650 V field stop trench gate IGBT with Ultrafast diode

文件：2.06606 Mbytes Page：13 Pages

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.