SMPS IGBT

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Higher Reliability

SMPS IGBT

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Higher Reliability

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ ID (FET equivalent) = 50A Features • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • H

TRANSISTOR MODULE

QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. ● IC 50A, VCEX 400/600V ● Low saturation voltage for higher efficiency. ● Isolated mounting bas

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

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