| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G5016 | Dual Ultra-Low On-Resistance Load Switch with Controlled Turn-On 文件：107.62 Kbytes Page：1 Pages | GMT 致新科技 |   | |
G5016 | Tapered Caps and Plugs–SAE 文件：97.16 Kbytes Page：1 Pages | HEYCO | | |
G5016 | Dual Power Switch | GMT 致新科技 | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | | ||
Zener Diode, 1/2 Watt 짹5 Tolerance Features: ● Zener Voltage 2.4 to 200V ● DO35 Package | NTE | |
G5016产品属性
- 类型
描述
- Vin (V)max.：
5.5
- RDS(ON)(m Ohm)：
16
- VOUT rising(µs)：
ADJ
- Ilimit(A)：
6
- OCFlag：
N
- Discharge(Ohm)：
220
- Note：
3V ~ 5V Vbias Needs
- Package：
TDFN2X3-14
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GMT/致新 |
2025+ |
QFN |
2861 |
原装进口价格优 请找坤融电子! |
|||
GMT/致新 |
18+ |
DFN |
3000 |
原装现货 |
|||
GMT/致新 |
2023+ |
QFN |
3000 |
一级代理优势现货,全新正品直营店 |
|||
GMT |
24+ |
QFN |
8000 |
新到现货，只做全新原装正品 |
|||
GMT/致新 |
25+ |
DFN |
90000 |
全新原装现货 |
|||
GMT/致新 |
25+ |
DFN |
15620 |
GMT/致新全新特价G5016KD1U即刻询购立享优惠#长期有货 |
|||
GMT/致新 |
25+ |
DFN |
880000 |
明嘉莱只做原装正品现货 |
|||
GMT/致新 |
22+ |
QFN |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
GMT |
24+ |
QFN |
9600 |
一级代理/全新现货/长期供应! |
|||
GWT |
21+ |
QFN |
1450 |
十年信誉,只做原装,有挂就有现货! |
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DdatasheetPDF页码索引
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