INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE

SINGLE-PHASE FULL WAVE BRIDGE 4 AMPERES FOR P.C. BOARD AND HEAT SINK MOUNTING

文件：40.59 Kbytes Page：2 Pages

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages