INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

Features •Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications •Industry-benchmark switching losses improve efficiency of all power supply topologies •50 reduction of Eoff parameter •Low IGBT conduction losses •Latest-generation IGBT design

INSULATED GATE BIPOLAR TRANSISTOR

文件：275.6 Kbytes Page：9 Pages

INSULATED GATE BIPOLAR TRANSISTOR

文件：287.76 Kbytes Page：8 Pages

IGBT

DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

INSULATED GATE BIPOLAR TRANSISTOR

文件：307.07 Kbytes Page：13 Pages

INSULATED GATE BIPOLAR TRANSISTOR

文件：307.07 Kbytes Page：13 Pages