Handheld Enclosures

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塑料机壳

封装/外壳：2-SMD，鸥翼裸焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：LED Z-POWER GREEN 525NM SMD 光电器件 LED 照明 - 彩色

The G421SD is designed for low power rectification

The G421SD is designed for low power rectification

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SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.1A

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High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

2.6 mm Series

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