DUAL N-Channel Enhancement Mode Power MOSFET

Description The G350N06D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G350P02LLE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G350P02LLEA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

圆形(线缆)连接器

Fluid chilled or hot water, up to 60 glycol

文件：945.03 Kbytes Page：4 Pages

60V N+N Channel TRENCH MOSFET

Celeron M Processor on 90 nm Process

文件：879.41 Kbytes Page：68 Pages

Celeron D Processor

文件：1.75778 Mbytes Page：82 Pages

Low Inductance, Radial, Aluminum Electrolytic High Frequency, Solid Aluminum Top

文件：182.95 Kbytes Page：4 Pages

9x14mm Differential PECL High Frequency VCXO(416MHz to 832MHz)

文件：105.86 Kbytes Page：2 Pages

HEADER STRIPS .100??Grid Solder Tail Single Row

文件：116.48 Kbytes Page：1 Pages