Enclosures

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Multipurpose Enclosures

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Multipurpose Enclosures

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塑料机壳

丝印代码：G3404；N-Channel Enhancement Mode Power MOSFET

Description The G3404 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G3404；N-Channel Enhancement Mode Power MOSFET

Description The G3404B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G3404；N-Channel Enhancement Mode Power MOSFET

Description The G3404BA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

丝印代码：G3404；N-Channel Enhancement Mode Power MOSFET

Description The G3404LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3400 is universally used for all commercial-industrial applications. Features * Lower Gate Charge * Small Package Outline * RoHS Compliant

Dual Bidirectional I2C Bus and SMBus Voltage- Level Translator

General Description The G3401 is a dual bidirectional I2C and SMBUS voltage-level translator with an enable (EN) input, and is operational from 1.2V to 3.3V VREF1 and 2.5V to 5.5V VREF2 . It allows bidirectional voltage translations between 1.2V and 5V, without use of directional pin. The low ON-

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3401 is universally used for all commercial-industrial applications. Features * Lower Gate Charge * Small Package Outline * RoHS Compliant

丝印代码：3401；P-Channel Enhancement Mode Power MOSFET

Description The G3401L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

Level Shifter

The G3402 is a qual bidirectional I2C and SMBUS voltage-level translator with an output enable(OE)input, and is operational from 1.2V to 3.3V VCCA and\n\n2.5V to 5.5V VCCB. It allows bidirectional voltage trans- lations between 1.2V and 5V, without use of direc- tional pin. The low ON-state resistan

Bidirectional I2C Bus and SMBus Voltage Level Translator

General Description The G3403 is a bidirectional I2C and SMBUS voltage-level translator with an enable (EN) input, and is operational from 1.2V to 3.3V VREF1 and 2.5V to 5.5V VREF2 . It allows bidirectional voltage translations between 1.2V and 5V, without use of directional pin. The low ON-state

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G3403 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G3403 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G3403A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G3403A is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. Features * Lower Gate Charge * Small Package Outline * RoHS Compliant

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

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包装：盒 描述：PL. MIRROR RAL; D=31.5X45 OVAL; 光学器件 反光镜

包装：盒 描述：PL. MIRROR RAL-UV; D=31.5X45 OVA 光学器件 反光镜

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

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丝印代码：3401；P-Channel Enhancement Mode Power MOSFET

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丝印代码：3401；P-Channel Enhancement Mode Power MOSFET

文件：1.6707 Mbytes Page：6 Pages

-30V P Channel TRENCH MOSFET

4-Bit Bidirectional Voltage Level Translator for Open Drain and Push-Pull Applications

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P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

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P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

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P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

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THREE TERMINAL POSITIVE FIXED VOLTAGE REGULATORS

Three-Terminal Positive Voltage Regulators These voltage regulators are monolithic integrated circuits designed as fixed–voltage regulators for a wide variety of applications including local, on–card regulation. These regulators employ internal current limiting, thermal shutdown, and safe–area co

THREE TERMINAL POSITIVE FIXED VOLTAGE REGULATORS

Three-Terminal Positive Voltage Regulators These voltage regulators are monolithic integrated circuits designed as fixed–voltage regulators for a wide variety of applications including local, on–card regulation. These regulators employ internal current limiting, thermal shutdown, and safe–area co

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS

High Voltage Power Transistors DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic

0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS

Plastic Medium Power NPN Silicon Transistor . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability