| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G3404B | 丝印代码：G3404；N-Channel Enhancement Mode Power MOSFET Description The G3404B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | |
G3404B | Trench Mosfet | GOFORD 谷峰半导体 | | |
MOSFET Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro | GOFORD 谷峰半导体 | | ||
丝印代码：G3404；N-Channel Enhancement Mode Power MOSFET Description The G3404BA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
SINGLE-SUPPLY DUAL OPERATIONAL AMPLIFIER? 文件：228.23 Kbytes Page：6 Pages | NJRC 日本无线 | | ||
SINGLE-SUPPLY DUAL OPERATIONAL AMPLIFIER? 文件：228.23 Kbytes Page：6 Pages | NJRC 日本无线 | | ||
SINGLE-SUPPLY DUAL OPERATIONAL AMPLIFIER? 文件：228.23 Kbytes Page：6 Pages | NJRC 日本无线 | | ||
SINGLE-SUPPLY DUAL OPERATIONAL AMPLIFIER? 文件：228.23 Kbytes Page：6 Pages | NJRC 日本无线 | | ||
SINGLE-SUPPLY DUAL OPERATIONAL AMPLIFIER? 文件：228.23 Kbytes Page：6 Pages | NJRC 日本无线 | |
G3404B产品属性
- 类型
描述
- Configuration：
N channel
- ESD：
NO
- VDS(min)：
30V
- Id at 25℃(max)：
5.6A
- PD(max)：
1.2W
- Vgs(th)typ(V)：
1.5V
- RDS(on)(typ)(@10V)：
18mΩ
- RDS(on)(typ)(@4.5V)：
26mΩ
- Qg(nC)：
12.2
- Ciss：
526
- Crss：
69
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
26+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
G3404B规格书下载地址
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