位置：首页 > IC中文资料第2255页 > G32N60E2
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
32A, 600V N-Channel IGBT Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode | Intersil |   | ||
32A, 600V N-Channel IGBT Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode | Intersil | |
G32N60E2产品属性
- 类型
描述
- 型号
G32N60E2
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAR |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
INTERSIL |
22+ |
TO-247 |
6000 |
十年配单,只做原装 |
|||
INTERSIL |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
恩XP |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
INTERSIL |
23+ |
TO-263 |
8400 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD/仙童 |
23+ |
TO-252TO |
90322 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
INTERSIL |
23+ |
TO-263 |
8400 |
专注配单,只做原装进口现货 |
|||
Intersil |
24+ |
TO-247 |
8866 |
||||
仙童/INTERS |
1822+ |
TO-252TO |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
G32N60E2规格书下载地址
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2019-10-12
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