型号 功能描述 生产厂家&企业 LOGO 操作
HGTG32N60E2

32A, 600V N-Channel IGBT

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

Intersil

32A, 600V N-Channel IGBT

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

Intersil

HGTG32N60E2产品属性

  • 类型

    描述

  • 型号

    HGTG32N60E2

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2025-8-10 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
12388
优势代理渠道,原装正品,可全系列订货开增值税票
FAIRCHILD/仙童
2023+
TO-220
6895
原厂全新正品旗舰店优势现货
FAIRCHILD
2018+
TO-247
11256
只做进口原装正品!假一赔十!
FAIRCHILD/仙童
25+
TO-220
54648
百分百原装现货 实单必成 欢迎询价
FAIRCHILD
23+
TO-247
9526
FAIRCHILD
25+23+
TO-247
13439
绝对原装正品全新进口深圳现货
Intersil
24+
TO-247
8866
FAIRCHILD/仙童
22+
TO247
32228
原装正品现货
三年内
1983
只做原装正品
仙童/INTERS
23+
TO-247
5000
专注配单,只做原装进口现货

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