| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
G30N60HS | HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
BIDW30N60TInsulatedGateBipolarTransistor(IGBT) GeneralInformation TheBourns®ModelBIDW30N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris | BournsBourns Inc. 伯恩斯（邦士） |  | | |
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode 文件：1.9827 Mbytes Page：16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
ACTIVE/SYNCHRONOUSRECTIFIER 文件：672.35 Kbytes Page：15 Pages | DIODESDiodes Incorporated 达尔科技 |  | | |
N-ChannelEnhancementModeMOSFET 文件：281.61 Kbytes Page：4 Pages | DACO DACO |  | | |
N-ChannelEnhancementModeMOSFET 文件：264.01 Kbytes Page：4 Pages | DACO DACO | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
22+ |
20000 |
全新、原装、现货 |
||||
FAIRCHILD |
1408+ |
TO-3P |
55000 |
绝对原装进口现货可开增值税发票 |
|||
ON SEMI |
22+ |
N/A |
10 |
正规渠道,只有原装! |
|||
FAIRCHILD/仙童 |
22+ |
TO-3P |
3255 |
强势库存!原装现货! |
|||
ON SEMI |
N/A |
13500 |
16余年资质 绝对原盒原盘 更多数量 |
||||
ON-安森美 |
24+25+/26+27+ |
TO-247-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
INFINEON |
22+ |
SOT-5105&NBS |
6700 |
全新原装品牌专营 |
|||
仙童FSC |
19+ |
TO-3P |
72075 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
23+ |
TO-3PE |
65480 |
|||||
INFINEON/英飞凌 |
23+ |
TO-247 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
G30N60HS芯片相关品牌
G30N60HS规格书下载地址
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