High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

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ACTIVE / SYNCHRONOUS RECTIFIER

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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