| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G30N60HS | High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh | Infineon 英飞凌 |   | |
BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris | Bourns 伯恩斯 | | ||
Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode 文件：1.9827 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
ACTIVE / SYNCHRONOUS RECTIFIER 文件：672.35 Kbytes Page：15 Pages | DIODES 美台半导体 | | ||
N-Channel Enhancement Mode MOSFET 文件：281.61 Kbytes Page：4 Pages | DACO 罡境电子 | | ||
N-Channel Enhancement Mode MOSFET 文件：264.01 Kbytes Page：4 Pages | DACO 罡境电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
15638 |
原装现货,当天可交货,原型号开票 |
|||
英飞凌 |
25+ |
TP247TO220 |
2949 |
原装正品,假一罚十! |
|||
Shindenge |
25+23+ |
TO-220 |
47465 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
FSC |
TO-3P |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON SEMI |
23+ |
N/A |
10 |
正规渠道,只有原装! |
|||
BELDEN |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ADI |
23+ |
TP247TO220 |
7000 |
||||
M/A-COM |
24+ |
SMD |
12800 |
M/A-COM专营品牌绝对进口原装假一赔十 |
|||
INFINEON |
20+ |
TO-247 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
23+ |
TO-3PE |
65480 |
G30N60HS规格书下载地址
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