G226EI芯片数据手册飞利浦现货供应价格PHILIPS-IC资料网

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型号	功能描述	生产厂家企业	LOGO
G226EI	High Isolation, 2W Low Cost, MiniDIP DC/DC Converters 文件：204.42 Kbytes Page：2 Pages	MPD	MPD
BFQ226	NPN video transistor DESCRIPTION NPN silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.	PHILIPS 飞利浦	PHILIPS
NTE226	Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 35V Collector–Emitter Voltage (RB	NTE	NTE
TIC226	SILICON TRIACS Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)	POINN	POINN
TIC226D	SILICON TRIACS Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)	POINN	POINN
TIC226M	SILICON TRIACS Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)	POINN	POINN

G226EI供应商更多...

更新时间：2026-5-22 18:05:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	G226EI	UPD	25+	全新-电源模块	10238	UPD电源模块G226EI交期短价格好#即刻询购立享优惠#长期有排单订	询价

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