丝印代码：G2232；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2232；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2232；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2232；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2232；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2232；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 7.2V – 850MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz

RDS Decorder

Overview The LA2232 and LA2232M are RDS demodulator ICs that provide both a 57 kHz bandpass filter as well as ARISK and DK signal recognition functions on chip. Costeffective RDS decoder systems can be constructed by using an LA2232 or 2232M in conjunction with a synchronization and error detecti

NPN SILICON BIAS RESISTOR TRANSISTOR

文件：150.44 Kbytes Page：12 Pages

FM IF WITH LOG AMPLIFIER

文件：289.95 Kbytes Page：8 Pages

FM IF WITH LOG AMPLIFIER

文件：289.95 Kbytes Page：8 Pages