| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G20N06J | Trench Mosfet | GOFORD 谷峰半导体 |   | |
60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMW 友台半导体 | | ||
60V N-Channel Enhancement Mode Power MOSFET General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMI 翊欧 | | ||
N-Channel 60-V (D-S) MOSFET 文件：897.38 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching 文件：67.37 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
20A mps,60 Volts N-CHANNEL MOSFET 文件：193.72 Kbytes Page：2 Pages | CHONGQING 平伟实业 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
2100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
门市 |
25+ |
91 |
60 |
原装正品,假一罚十! |
|||
VISHAY原装 |
25+23+ |
TO-247 |
24543 |
绝对原装正品全新进口深圳现货 |
|||
HARRIS |
24+ |
TO-3P |
76 |
||||
FAIRCHILD |
25+ |
DIP-40 |
18000 |
原厂直接发货进口原装 |
|||
SANYO |
22+ |
TO-252 |
20000 |
公司只做原装 品质保障 |
|||
IR |
23+ |
TO-247 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-247 |
7000 |
||||
GOFORD(谷峰) |
2447 |
TO-251 |
105000 |
72个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
23+ |
TO-3P |
65480 |
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G20N06J规格书下载地址
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2019-4-16
DdatasheetPDF页码索引
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