旋转端子/弹簧式 G196

• 内附弹簧，可耐温105度，耐电压300V。\n• 专用于接线导电产品，能使用于单心线及较粗心电线。;

GaP photodiode

GaP photodiode Schottky type Features ● Low dark current ● High UV sensitivity Applications ● Analytical instruments ● UV detection

SAW Components

Features ■ TV IF filter with Nyquist slope and sound shelf ■ Reduced group delay predistortion as compared with standard B/G, half ■ Suitable for CENELEC EN 55020

肖特基型

GaP光电二极管的光谱响应波段与人眼接近，而其在硅光电二极管所涵盖的较长波段的灵敏度被抑制。典型应用包括紫外探测，分光光度计和颜色传感。 \n- 低暗电流\n- 高紫外灵敏度;

GaP photodiode

GaP photodiode Schottky type Features ● Low dark current ● High UV sensitivity Applications ● Analytical instruments ● UV detection

IF Filter for Intercarrier Applications 38,90 MHz

Features ■ TV IF filter with Nyquist slope and sound shelf ■ Reduced group delay predistortion as compared with standard B/G, half ■ Suitable for CENELEC EN 55020

GaP photodiode

GaP photodiode Schottky type Features ● Low dark current ● High UV sensitivity Applications ● Analytical instruments ● UV detection

肖特基型

GaP光电二极管的光谱响应波段与人眼接近，而其在硅光电二极管所涵盖的较长波段的灵敏度被抑制。典型应用包括紫外探测，分光光度计和颜色传感。 \n- 低暗电流\n- 高紫外灵敏度;

IF Filter for Intercarrier Applications

Features ■ TV IF filter with Nyquist slope and sound shelf ■ High color carrier level ■ Reduced group delay predistortion as compared with standard B/G, half ■ Suitable for CENELEC EN 55020

IF Filter for Intercarrier Applications

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PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=22kΩ)

GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply)

GaAs MMIC ● Broadband Power Amplifier [ 800..3500 Mhz ] ● DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ● Single Voltage Supply ● Operating voltage range: 2.0to 6 V ● Pout = 25.5dBm at Vd=2.4V ● Pout = 27.0dBm at Vd=3.0V ● Pout = 30.0dBm at Vd=5.0V ● Overall power added efficiency up to 50 ● Easy exter

Silicon Complementary Transistors Audio Power Output and Medium Power Switching

Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: hFE= 2.3 Min @ IC= 7A Collector–Emitter Sustaining Voltage: VCE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

LM196/LM396 10 Amp Adjustable Voltage Regulator

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