微功率1～3W G_S-1WR2系列，1W,DC-DC模块电源（19.5*9.8*12.5mm）

是小体积，高效率的微小功率隔离非稳压输出DC/DC模块电源。 ○  特点：定电压输入，隔离非稳压双路输出，1W功率○  隔离电压：6000Vdc\n○  效率 高达 ：80%\n○  工作环境温度：-40°C～+ 85°С\n○  MTBF≥350万小时 (35×105Hrs)\n○  符合RoHS指令\n○  线性调节率 (输入电压变化±1%时)：±1.2% \n○  负载调节率(10%-100%满载) ：15%\n○  纹波 / 噪声(20MHz带宽) 150mVp-p \n○  小型SIP封装\n○  无需外加元件\n○  短路保护，自动恢复\n○  塑料外壳，满足UL94-V0要求;

Low Power Dual Operational Amplifiers

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P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

Silicon epitaxial planar type

Features 1. Short reverse recovery time trr 2. Small terminal capacitance, Ct

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

L-BAND SPDT SWITCH

DESCRIPTION The PPG152TA is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in as original 6 pin mini-mold that is smalle