适用于二维红外成像的64 × 64像素图像传感器

G11097-0606S具有由一个CMOS读出电路（ROIC，读出集成电路）和背照式铟镓砷光电二极管组成的混合型结构。每个像素都是由一个铟镓砷光电二极管和一个ROIC通过铟突起电气连接组成的。ROIC内部的时序产生器使得仅仅通过外部数字输入主时钟和主开始信号，就可以获得模拟图像输出和AD-TRIG输出。该器件有64×64个像素，间距为50um，信号从一个视频线中读出。入射到铟镓砷光电二极管上的光被转换为电信号，再通过铟突起输入ROIC。　ROIC中的电信号通过电荷放大器被转换为电压信号，然后通过移位寄存器从视频线中顺序读出。该器件为TO-8密封封装，内含一级TE制冷，成本低，稳定性高。 \n- 通过偏置补偿，获得出色线性度\n- 灵敏度：1600 nV/e-\n- 全像素同步积分（全局快门模式）\n- 操作简单（内置时序产生器）\n- 一级TE制冷\n- 低成本;

Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging

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N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Photo Interrupter

For contactless SW, object detection Outline ON1109 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to f

RECTIFIER DIODE

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