Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

N-Channel 6 50V (D-S) Power MOSFET

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N-Channel 650V (D-S) Power MOSFET

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10A 600V N-channel Enhancement Mode Power MOSFET

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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