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G085

SOLAR PANEL 85 W EFFICIENT, RELIABLE, AND DURABLE

文件:165.72 Kbytes Page:2 Pages

AAC

丝印代码:G085C03D;N and P Channel Enhancement Mode Power MOSFET

Description The G085C03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

丝印代码:G085N03;N-Channel Enhancement Mode Power MOSFET

Description The G085N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

丝印代码:G085N03;N-Channel Enhancement Mode Power MOSFET

Description The G085N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

丝印代码:G085P02;P-Channel Enhancement Mode Power MOSFET

Description The G085P02TS uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

包装:袋 描述:LINEAR STAGE TB 50-16 光电器件 光力学

EXCELITAS

埃赛力达

包装:盒 描述:LINEAR STAGE TB 80-25 光电器件 光力学

EXCELITAS

埃赛力达

30/-30V N+P Channel TRENCH MOSFET

GOFORD

谷峰半导体

30V N Channel TRENCH MOSFET

GOFORD

谷峰半导体

-20V P Channel TRENCH MOSFET

GOFORD

谷峰半导体

FAMILY OF WIDE-BANDWIDTH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS

文件:1.80854 Mbytes Page:47 Pages

TI

德州仪器

FAMILY OF WIDE-BANDWIDTH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS

文件:1.80854 Mbytes Page:47 Pages

TI

德州仪器

FAMILY OF WIDE-BANDWIDTH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS

文件:1.80854 Mbytes Page:47 Pages

TI

德州仪器

FAMILY OF WIDE-BANDWIDTH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS

文件:1.80854 Mbytes Page:47 Pages

TI

德州仪器

FAMILY OF WIDE-BANDWIDTH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS

文件:1.80854 Mbytes Page:47 Pages

TI

德州仪器

G085产品属性

  • 类型

    描述

  • Package:

    DFN3*3-8L DUAL

  • Type:

    N+P

  • ESD Diode:

    NO

  • Vds(V):

    30/-30

  • Vgs(V):

    ±20

  • Id(A):

    28/-12

  • Pd(W):

    13/30

  • Vgs(th)max(V):

    2/-2

  • Rds(on)mΩ(typ)@Vgs=10V:

    9/19

  • Rds(on)mΩ(typ)@Vgs=4.5V:

    12/26

  • Rds(on)mΩ(max)@Vgs=10V:

    11/23

  • Rds(on)mΩ(max)@Vgs=4.5V:

    15/31

  • Qg(nC):

    18/25

  • Qgs(nC):

    3/3

  • Qgd(nC):

    4/6

  • Ciss(pF):

    1085/1352

  • Crss(pF):

    151/169

  • Technology:

    TRENCH

更新时间:2026-8-3 15:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AU
24+
65200
AU
23+
7300
专注配单,只做原装进口现货

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