N-Channel Enhancement Mode Power MOSFET

Description The G025N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

30V N Channel TRENCH MOSFET

OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

OptiMOS?? M-Series Power-MOSFET

Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications

OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

OptiMOS?? M-Series Power-MOSFET

Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications