RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

• CDMA Performance @ 1990 MHz, 26 Volts

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13

885 kHz — -47 dBc in 30 kHz BW

1.25 MHz — -55 dBc in 12.5 kHz BW

2.25 MHz — -55 dBc in 1 MHz BW

Output Power — 4.5 Watts Avg.

Power Gain — 13.5 dB

Efficiency — 17

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.