The RF MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment.

• Guaranteed Performance @ 880 MHz, 26 Volts

Output Power — 85 Watts PEP

Power Gain — 12 dB

Efficiency — 30

Intermodulation Distortion — –28 dBc

• 100 Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR

@ 26 Vdc, 880 MHz, 85 Watts CW

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.