General Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s high cell density DMOS technology process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint package.

Features

• 10.5 A, 20 V. RDS(ON) = 13.5 mΩ @ VGS = 4.5 V

RDS(ON) = 16 mΩ @ VGS = 2.7 V

• High cell density for extremely low RDS(ON)

• High power and current handling capability in a widely used surface mount package

Applications

• DC/DC converter

• Load switch