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FQB50N06中文资料
FQB50N06数据手册规格书PDF详情
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• 50 A , 60 V, RDS(on) = 22 mΩ (Max.) @VGS = 10 V, ID = 25 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 65 pF)
• 100 Avalanche Tested
• 175°C Maximum Junction Temperature Rating
FQB50N06产品属性
- 类型
描述
- 型号
FQB50N06
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET N D2-PAK
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET, N, D2-PAK
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET, N, D2-PAK, Transistor
- Polarity
N Channel, Continuous Drain Current
- Id
50
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET, N, D2-PAK, Transistor
- Polarity
N Channel, Continuous Drain Current
- Id
50A, Drain Source Voltage
- Vds
60V, On Resistance
- Rds(on)
22mohm, Rds(on) Test Voltage
- Vgs
10V, Threshold Voltage
- Vgs
4V, Power Dissipation
- Pd
120W , RoHS
- Compliant
Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO263 |
8950 |
BOM配单专家,发货快,价格低 |
|||
FAIRCHILD |
2025+ |
TO-263 |
32560 |
原装优势绝对有货 |
|||
FAIRCHILD |
24+/25+ |
302 |
原装正品现货库存价优 |
||||
FAIRCHILD |
24+ |
TO-263(D2PAK) |
8866 |
||||
FAIRCHILD |
25+23+ |
TO263 |
14402 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD |
18+ |
TO-263 |
41200 |
原装正品,现货特价 |
|||
FAIRCHILD |
12+ |
TO-263 |
44 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
2023+环保现货 |
TO-263 |
20000 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
|||
FAIRCHILD |
25+ |
TO-252 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
FAIRCHILD/仙童 |
24+ |
TO-263 |
30000 |
只做正品原装现货 |
FQB50N06TM 价格
参考价格：￥2.9608
FQB50N06 资料下载更多...
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FAIRCHILD相关芯片制造商
Datasheet数据表PDF页码索引
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