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FDZ2552P中文资料
FDZ2552P数据手册规格书PDF详情
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2552P minimizes both PCB space and RDS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultr alow profile packaging, low gate charge, and low RDS(ON).
Features
• –6 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V RDS(ON) = 0.075 Ω @ VGS = –2.5 V.
• Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8.
• Ultra-thin package: less than 0.70 mm height when mounted to PCB.
• Outstanding thermal transfer characteristics: significantly better than SO-8.
• Ultra-low Qg x RDS(ON) figure-of-merit.
• High power and current handling capability.
Applications
• Battery management
• Load switch
• Battery protection
FDZ2552P产品属性
- 类型
描述
- 型号
FDZ2552P
- 功能描述
MOSFET 20V/12V NCh MOSFET Common Drain
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
2023+环保现货 |
BGA |
20000 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
|||
FAIRCHILD |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
FAIRCHILD |
25+ |
BGA |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
FAIRCHILD |
18++ |
SMD |
2570 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
25+ |
BGA |
4258 |
原装正品 价格优势 |
|||
FAIRCHILD |
0620 |
BGA |
2570 |
全新、原装 |
|||
FAIRCHILD |
24+ |
BGA-18 |
4860 |
||||
Fairchild |
17+ |
BGA-18 |
6200 |
100%原装正品现货 |
|||
FAIRCHILD |
22+ |
BGA-18 |
1000 |
进口原装!现货库存 |
|||
FAIRCHILD/仙童 |
24+ |
SMD |
60000 |
FDZ2552P 资料下载更多...
FDZ2552P 芯片相关型号
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FAIRCHILD相关芯片制造商
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