General Description

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).

Features

• 9 A, 20 V. RDS(ON) = 0.018 Ω=@ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V.

• Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8.

• Ultra-thin package: less than 0.70 mm height when mounted to PCB.

• Outstanding thermal transfer characteristics: significantly better than SO-8.

• Ultra-low Qg x RDS(ON) figure-of-merit.

• High power and current handling capability.

Applications

• Battery management

• Load switch

• Battery protection