General Description

This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.

Features

• 7.5 A, 20 V

RDS(ON) = 19 mΩ @ VGS = 4.5 V

RDS(ON) = 23 mΩ @ VGS = 2.5 V

• Isolated source and drain pins

• ESD protection diode (note 3)

• High performance trench technology for extremely

low RDS(ON) @ VGS = 2.5 V

• Low profile TSSOP-8 package

Applications

• Li-Ion Battery Pack