General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

Features

■ -6 A, -20 V.

RDS(ON) = 0.030 W @ VGS = -4.5 V,

RDS(ON) = 0.040 W @ VGS = -2.5 V.

■ Low gate charge (23nC typical).

■ High performance trench technology for extremely low RDS(ON).

■ High power and current handling capability.